Document
Advanced Power Electronics Corp.
AP40T10GI-HF
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test ▼ Simple Drive Requirement ▼ Fast Switching Characteristic
D
G S
Description
AP40T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
BVDSS
RDS(ON) ID3
100V 36mΩ
40A
GD S
TO-220CFM(I)
Absolute
Symbol
Maximum
RatingPsa@ramTejt=er25o.C(unless
otherwise specified)
Rating
Units
VDS VGS
ID@TC=25℃ ID@TC=100℃ IDM
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
100 V +20 V
40 A 27 A 150 A
PD@TC=25℃
Total Power Dissipation
37.5 W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value 4 65
Units ℃/W ℃/W
1 201411072
AP40T10GI-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Drain-Source Breakdown Voltage VGS=0V, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=15A
VGS=6V, ID=10A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=15V, ID=15A
Drain-Source Leakage Current
VDS=100V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=80V ,VGS=0V
Gate-Source Leakage
VGS=+20V, VDS=0V
Total Gate Charge
ID=40A
Gate-Source Charge
VDS=50V
Gate-Drain ("Miller") Charge
VGS=10V
Turn-on Delay Time
VDS=50V
Rise Time
ID=40A
Turn-off Delay Time
RG=2.5Ω
Fall Time
VGS=10V
Input Capacitance Output Capacitance
.VGS=0V
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
100 - - V
- - 36 mΩ
- - 42 mΩ
2 - 4V
- 14.5 -
S
- - 25 uA
- - 100 uA
- - +100 nA
- 24 40 nC
- 5.4 - nC
- 9.6 - nC
- 9 - ns
- 64 - ns
- 19 - ns
- 75 - ns
- 1310 2100 pF
- 270 - pF
- 85 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions IS=15A, VGS=0V IS=30A, VGS=0V, dI/dt=100A/µs
Min. Typ. Max. Units - - 1.2 V - 60 - ns - 125 - nC
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Ensure that the junction temperature does not exceed T Jmax..
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT .