DatasheetsPDF.com

AP40T10GI-HF Dataheets PDF



Part Number AP40T10GI-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP40T10GI-HF DatasheetAP40T10GI-HF Datasheet (PDF)

Advanced Power Electronics Corp. AP40T10GI-HF RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test ▼ Simple Drive Requirement ▼ Fast Switching Characteristic D G S Description AP40T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM packag.

  AP40T10GI-HF   AP40T10GI-HF



Document
Advanced Power Electronics Corp. AP40T10GI-HF RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test ▼ Simple Drive Requirement ▼ Fast Switching Characteristic D G S Description AP40T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID3 100V 36mΩ 40A GD S TO-220CFM(I) Absolute Symbol Maximum RatingPsa@ramTejt=er25o.C(unless otherwise specified) Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 100 V +20 V 40 A 27 A 150 A PD@TC=25℃ Total Power Dissipation 37.5 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 4 65 Units ℃/W ℃/W 1 201411072 AP40T10GI-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=15A VGS=6V, ID=10A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=15V, ID=15A Drain-Source Leakage Current VDS=100V, VGS=0V Drain-Source Leakage Current (Tj=125oC) VDS=80V ,VGS=0V Gate-Source Leakage VGS=+20V, VDS=0V Total Gate Charge ID=40A Gate-Source Charge VDS=50V Gate-Drain ("Miller") Charge VGS=10V Turn-on Delay Time VDS=50V Rise Time ID=40A Turn-off Delay Time RG=2.5Ω Fall Time VGS=10V Input Capacitance Output Capacitance .VGS=0V VDS=25V Reverse Transfer Capacitance f=1.0MHz 100 - - V - - 36 mΩ - - 42 mΩ 2 - 4V - 14.5 - S - - 25 uA - - 100 uA - - +100 nA - 24 40 nC - 5.4 - nC - 9.6 - nC - 9 - ns - 64 - ns - 19 - ns - 75 - ns - 1310 2100 pF - 270 - pF - 85 - pF Source-Drain Diode Symbol Parameter VSD Forward On Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions IS=15A, VGS=0V IS=30A, VGS=0V, dI/dt=100A/µs Min. Typ. Max. Units - - 1.2 V - 60 - ns - 125 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Ensure that the junction temperature does not exceed T Jmax.. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT .


AP40T10GI AP40T10GI-HF AP30T10GI-HF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)