IPG20N06S3L-23
OptiMOS®-T Power-Transistor
Product Summary V DS R DS(on),max5) ID 55 23 20 V mΩ A
Features • Dual N-c...
IPG20N06S3L-23
OptiMOS®-T Power-
Transistor
Product Summary V DS R DS(on),max5) ID 55 23 20 V mΩ A
Features Dual N-channel Logic Level - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested PG-TDSON-8-4
Type IPG20N06S3L-23
Package PG-TDSON-8-4
Marking 3N06L23
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) one channel active Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 5) Avalanche current, single pulse5) Gate source voltage4) Power dissipation one channel active Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg I D=10A T C=25 °C Value 20 20 Unit A
80 110 20 ±16 45 -55 ... +175 55/175/56 mJ A V W °C
Rev. 1.0
page 1
2008-09-23
IPG20N06S3L-23
Parameter
Symbol
Conditions min.
Values typ. max.
Unit
Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current5) V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=20 µA V DS=55 V, V GS=0 V, T j=25 °C V DS=55 V, V GS=0 V, T j=125 °C2) Gate-source leak...
