AP90T03P

AP90T03P RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower On- resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 4mΩ 75A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters. D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@Tc=25℃ ID@Tc=100℃ IDM PD@Tc=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 3 Rating 30 ±20 75 63 350 96 0.7 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.3 62 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200712202 AP90T03P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA 2 Min. 30 0.8 - Typ. 0.02 55 60 8.5 38 14 83 66 120 1010 890 Max. Units 4 6 3 1 25 ±100 96 V V/℃ mΩ mΩ ...