N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9980GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Single Drive Requirement ▼ Fast...
Description
AP9980GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Single Drive Requirement ▼ Fast Switching Performance ▼ RoHS Compliant G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
80V 45mΩ 21.3A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9980GJ) are available for low-profile applications.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 80 ±25 21.3 13.4 80 41.7 0.33 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.0 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
201101061-1/4
AP9980GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltag...
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