AP75N07GP-HF

AP75N07GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 75V 11mΩ 80A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP75N07GP) are available for low-profile applications. G D S TO-220(P) G D S TO-263(S) Units V V A A A W W/ ℃ mJ ℃ ℃ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 4 Rating 75 +20 80 70 320 300 2 450 -55 to 175 -55 to 175 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 5 Value 0.5 40 62 Units ℃/W ℃/W ℃/W 1 201212283 Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice AP75N07GS/P-HF ...