WTE
POWER SEMICONDUCTORS
SR3150 – SR3200
Pb
3.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
Schottky...
WTE
POWER SEMICONDUCTORS
SR3150 – SR3200
Pb
3.0A HIGH VOLTAGE SURFACE MOUNT
SCHOTTKY BARRIER DIODE
Features
Schottky Barrier Chip Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 100A Peak For Use in Low Voltage Application Guard Ring Die Construction Plastic Case Material has UL Flammability Classification Rating 94V-O B D A F C H E G
Mechanical Data
Case: SMB/DO-214AA, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Device Code Weight: 0.093 grams (approx.) Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4
SMB/DO-214AA Dim Min Max A 3.30 3.94 B 4.06 4.70 C 1.91 2.11 D 0.152 0.305 E 5.08 5.59 F 2.13 2.44 G 0.051 0.203 H 0.76 1.27 All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TL = 75°C Symbol VRRM VRWM VR VR(RMS) IO
@TA=25°C unless otherwise specified
SR3150
SR3200
Unit
150 105 3.0
200 140
V V A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage @IF = 3.0A @TA = 25°C @TA = 100°C
IFSM VFM IRM RθJL RθJA Tj TSTG
100 0.92 0.5 20 20 75 -65 to +125 -65 to +150
A V mA °C/W °C °C
Typical Thermal Resistance (Note...