PNM723T703E0-2

PNM723T703E0-2 N-Channel MOSFET Description PNM723T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） MOSFET Product Summary VDS(V) 40 rDS(on)(Ω) 3.5@ VGS=10V VGS(th)(V) 1 to 2.0 ID(A) 0.18 G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance VDSS IDSS IGSS VGS(th) RDS(ON) ID =10μA,VGS=0V VDS =40V,VGS=0V VDS =0V,VGS=±20V VDS =VGS, ID =250μA VGS=5V, ID =0.05A VGS=10V, ID =0.5A, 40 1 0.5 ±1 4.5 4.5 V μA μA V Ω Ω DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS CDSS CRSS VGS=0V, VDS =25V, f=1MHz 40 20 5 pF pF pF SWITCHING PARAMETERS Turn-On DelayTime Turn-Off DelayTime td(on) td(off) VDS=30V, VGS =10V, RG=25Ω, RL=150Ω ID =0.2A 20 20 ns ns Rev.06 1 www.prisemi.com PNM723T703E0-2 N-Channel MOSFET Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation Continuous Pulsed TA=25℃ Symbol VDS VGS ID ID PD Value 40 ±20 0.18 0.36 150 Units V V A A mW Typical Characteristics 1.0 1.0 0.8 ID – Drain Current (A) VGS=6.0V ID – Drain Current (A) T=25°C 0.8 T=55°C 0.6 0.6 VGS=4.5V 0.4 0.4 T=125°C 0.2 0.2 VGS=3.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5...