N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9974GS/P-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Single Drive Requirement ▼ Fast...
Description
AP9974GS/P-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Single Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
60V 12mΩ 72A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9974GP) are available for low-profile applications. G D G D S
TO-263(S)
TO-220(P)
S Rating 60 +20 72 46 300 104 0.8 Units V V A A A W W/ ℃ mJ ℃ ℃
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
3
45 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value 1.2 40 62
Units ℃/W ℃/W ℃/W 1 201109272
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
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