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HAT3008R Dataheets PDF



Part Number HAT3008R
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N/P Channel Power MOSFET
Datasheet HAT3008R DatasheetHAT3008R Datasheet (PDF)

HAT3008R/HAT3008RJ Silicon N/P Channel Power MOS FET High Speed Power Switching ADE-208-536B (Z) 3rd. Edition February 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP–8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Nch Pch HAT3008R/HAT3008RJ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage.

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HAT3008R/HAT3008RJ Silicon N/P Channel Power MOS FET High Speed Power Switching ADE-208-536B (Z) 3rd. Edition February 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP–8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Nch Pch HAT3008R/HAT3008RJ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT3008R HAT3008RJ Avalanche energy HAT3008R HAT3008RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. 2. 3. 4. Pch Pch Tch Tstg Note2 Note3 Unit Pch – 60 ± 20 – 3.5 – 28 – 3.5 V V A A A VDSS VGSS ID I D(pulse) I DR I AP Note4 Note4 Note1 60 ±20 5 40 5 — 5 — – 3.5 — 1.05 2 3 150 –55 to + 150 — A — mJ W W °C °C EAR — 2.14 2 3 150 – 55 to + 150 PW ≤ 10 µs, duty cycle ≤ 1 % 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Value at Tch=25°C, Rg≥50Ω 2 HAT3008R/HAT3008RJ Electrical Characteristics (Ta = 25°C) ( N Channel ) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Zero gate voltage drain current HAT3008R Symbol Min V(BR)DSS V(BR)GSS I GSS I DSS 60 ± 20 — — — — — 1.2 — — 6 — — — — — — — — Typ — — — — — — — — 0.043 0.056 9 520 270 100 11 40 110 80 0.84 Max — — ± 10 1 0.1 — 10 2.2 0.058 0.084 — — — — — — — — 1.1 Unit V V µA µA µA µA µA V Ω Ω S pF pF pF ns ns ns ns V IF = 5 A, VGS = 0 Note4 IF =5 A, VGS = 0 diF/ dt = 50 A/µs VDS = 48 V, VGS = 0 Ta = 125°C VDS = 10 V, I D = 1 mA I D = 3 A, VGS = 10 V Note4 I D = 3 A, VGS = 4 V Note4 I D = 3 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1MHz VGS =10 V, ID = 3 A VDD ≅ 30 V Test Conditions I D = 10 mA, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 16 V, VDS = 0 VDS = 60 V, VGS = 0 HAT3008RJ I DSS HAT3008R I DSS HAT3008RJ I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 5. Pulse test — 40 — ns 3 HAT3008R/HAT3008RJ ( P Channel ) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Zero gate voltage drain current HAT3008R HAT3008RJ HAT3008R HAT3008RJ Symbol Min V(BR)DSS V(BR)GSS I GSS I DSS I DSS I DSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr – 60 ± 20 — — — — — –1.2 — — 3 — — — — — — — — — Typ — — — — — — — — 0.12 0.16 4..


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