HAT2064R

HAT2064R Silicon N Channel Power MOS FET Power Switching ADE-208-930G (Z) 8th. Edition May 2000 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R DS(on) = 5.0 mΩ typ (at VGS = 10V) Outline SOP-8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2064R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Ambient Thermal Impedance Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Note2 Note2 Note1 Ratings 30 ± 20 16 128 16 2.5 50 150 – 55 to + 150 Unit V V A A A W ° C/W °C °C θ ch-a Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s 2 HAT2064R Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 30 ± 20 — — 1.0 — — 18 — — — — — — — — — — — — Typ — — — — — 5.0 7.0 30 2200 600 330 40 6 8 20 35 60 16 0.9 50 Max — — ± 10 1 2.5 6.3 10 — — — — — — — — — — — 1.17 — Unit V V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, V DS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA I D = 8 A, VGS = 10 V Note3 I D = 8 A, VGS = 4.5...