HAT2053M

HAT2053M Silicon N Channel Power MOS FET Power Switching ADE-208-755B(Z) Preliminary 3rd. Edition December 1998 Features Low on-resistance Low drive current High density mounting 2.5V gate drive device can be driven from 3V source Outline TSOP–6 4 5 6 3 2 1 1 2 5 6 D D D D 3 G 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT2053M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID* 2 1 Ratings 20 ±12 6.1 24.4 6.1 2 3 Unit V V A A A W W °C °C I D(pulse) * I DR* 2 Pch (pulse)* 2.0 1.05 150 –55 to +150 Pch (continuous) * Channel temperature Storage temperature Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW≤ 5s,Ta=25°C 3. When using the alumina ceramic board (50 x 50 x 0.7 mm) ,Ta=25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min 20 — — 0.4 — — 6.5 — — — — — — — — — Typ — — — — 28 37 11 570 220 160 15 100 90 105 0.95 (50) Max — ±0.1 1 1.4 33 48 — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns IF = 6.1A, VGS = 0 *1 IF = 6.1A, VGS = 0 diF/ dt =20A/µs Test Conditions I D = 10mA, VGS = 0 VGS = ±12V, VDS = 0 VDS = 20 V, VGS = 0 VDS = 10V, I D = 1mA I D = 3A, VGS = 4.5V *1 I D = 3A, VGS = 2.5V *1 I D = 3A, VDS = 10V *1 VDS = 10V VGS = 0 f = 1MHz VGS = 4.5V, ID = 3A RL = 3.3Ω Drain to source breakdown voltage V(BR)DSS Gate to source l...