HAT2051T

HAT2051T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-661A (Z) 2nd. Edition February 1999 Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 65 34 87 1 D 8 D 12 4 G 5 G S S 2 3 S S 6 7 MOS1 MOS2 1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate HAT2051T Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg Note2 Note3 Note1 Ratings 30 ± 10 1 4 1 0.8 1.2 150 – 55 to + 150 Unit V V A A A W W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ± 10 — — 0.75 — — 1.4 — — — — — — — — — Typ — — — — — 0.14 0.2 2.2 155 75 35 12 30 35 25 0.81 35 Max — — ± 10 1 1.75 0.2 0.3 — — — — — — — — 1.1 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 1 A, VGS = 0 Note4 I F = 1 A, VGS = 0 diF/ dt = 20 A/µs Test Conditions I D = 10 mA, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 8 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA I D = 0.5 A, VGS = 10 V Note4 I D = 0.5 A, VGS = 4 V Note4 I D = 0.5 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f...