Document
AP9466GM
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic
SO-8
S S D D D D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
S G
40V 13.5mΩ 10A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 40 ± 20 10 8.4 40 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 50
Unit ℃/W
Data and specifications subject to change without notice
200810071-1/4
AP9466GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=10A VGS=4.5V, ID=6A
Min. 40 1 -
Typ. 9.9 14.4 2.4 9.2 7.6 6.4 24 9 800 170 140 1.3
Max. Units 13.5 21 3 1 100 ±100 23 1280 2 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=40V, VGS=0V VDS=32V, VGS=0V VGS=±20V ID=10A VDS=32V VGS=4.5V VDS=20V ID=1A RG=3.3Ω,VGS=10V RD=20Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2 2
Test Conditions IS=2.1A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 29 25
Max. Units 1.2 V ns nC
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4
AP9466GM
50 50
T A = 25 o C
40
ID , Drain Current (A)
10V 7.0V 5.0V 4.5V ID , Drain Current (A)
T A = 150 o C
40
10V 7.0V 5.0V 4.5V
30
30
20
20
V G =3.0V
10
V G =3.0V
10
0
0
0
0
1
1
2
2
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
1.9
18
ID=6A T A =25 ℃
I D = 10 A V G =10V
1.4
16
14
Normalized RDS(ON)
RDS(ON) (mΩ)
0.9
12
10
0.4 2 4 6 8 10 -50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.6
10
8
6
Normalized VGS(th) (V)
o T j =150 C
T j =25 o C
1.2
IS(A)
0.8
4
0.4
2
0
0.0 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3/4
AP9466GM
f=1.0MHz
16 10000
I D = 10 A VGS , Gate to Source Voltage (V)
12
8
C (pF)
V DS = 20 V V DS = 24 V V DS = 32 V
1000
C iss
4
C oss C rss
0 0 10 20 30 100 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
100us 1ms
Normalized Thermal Response (Rthja)
0.2
0.1
0.1
0.05
ID (A)
1
10ms 100ms
0.02 0.01
PDM
0.01
Single Pulse
t T
Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=125 oC/W
0.1
1s T A =25 o C Single Pulse DC
0.01 0.01 0.1 1 10 100
0.001 0.0001 0.001 0.01 0.1 1 10 100 1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 4.5V QGS QGD
10% VGS td(on) tr td(off) tf
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
SYMBOLS
Millimeters
MIN NOM MAX
A 8 7 6 5 E1 1
E
1.35 0.10 0.33 0.19 4.80 3.80 5.80 0.38 0
1.55 0.18 0.41 0.22 4.90 3.90 6.15 0.71 4.00 1.27 TYP
1.75 0.25 0.51 0.25 5.00 4.