HAT2044R

HAT2044R Silicon N Channel Power MOS FET Power Switching ADE-208-722A (Z) 2nd Edition February 1999 Features Capable of 2.5 V gate drive Low drive current High density mounting Low on-resistance R DS(on) = 6.5 mΩ typ (at VGS = 4.5V) Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2044R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ± 12 15 120 15 2.5 150 – 55 to + 150 Unit V V A A A W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 — — 0.4 — — — 24 — — — — — — — — — — — — Typ — — — — 6.5 7.0 9.0 40 3420 950 480 48 32 16 45 285 470 360 0.85 45 Max — ± 0.1 1 1.4 9.0 9.5 13.0 — — — — — — — — — — — 1.1 — Unit V µA µA V mΩ mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns IF = 15 A, VGS = 0 Note3 IF = 15 A, VGS = 0 diF/ dt = 20 A/ µs Test Conditions I D = 10 mA, VGS = 0 VGS = ±12 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA I D = 8 A, VGS = 4.5 V Note3 I D = 8 A, VGS = 4.0 V Note3 I D = 8 A, VGS = 2.5 V Note3 I D = 8 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4 V I D = 15 A VGS = 4 V, ID = 8 A VDD ≅ 10 V Drain to source ...