Silicon N-Channel Power MOSFET
HAT2043R
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-668D (Z) 5th. Edition February 1999 Feature...
Description
HAT2043R
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-668D (Z) 5th. Edition February 1999 Features
Low on-resistance Capable of 4 V gate drive Low drive current High density mounting
Outline
SOP–8
8 5 7 6
3 1 2 7 8 D D 5 6 D D
4
2 G
4 G
S1
S3
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
MOS1
MOS2
HAT2043R
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg
Note2 Note3 Note1
Ratings 30 ± 20 8 64 8 2.0 3.0 150 – 55 to + 150
Unit V V A A A W W °C °C
1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 30 — — 1.0 — — 9 — — — — — — — — — — — — Typ — — — — 0.016 0.022 14 1170 390 240 32 22 10 32 190 85 110 0.84 35 Max — ± 0.1 1 2.5 0.022 0.029 — — — — — — — — — — — 1.09 — Unit V µA µA V Ω Ω S pF pF pF nc nc nc ns ns ns ns V ns IF = 8 A, VGS = 0 Note4 IF = 8 A, VGS = 0 diF/ dt = 20 A/ µs Test Conditions I D = 10 mA, VGS = 0 VGS = ± 20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA I D = 4 A, VGS = 10 V Note4 I D = 4 A, VGS = 4 V Note4 I D = 4 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1...
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