Document
AP9468GH/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
40V 7mΩ 75A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G
□
D
S
TO-252(H)
The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9468GJ) are available for low-profile applications.
G D S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3
Rating 40 +20 75 57 300 89 0.7 -55 to 150 -55 to 150
Units V V A A A W W/℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.4 110 Units ℃/W ℃/W
Data & specifications subject to change without notice
1 200812012
AP9468GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=250uA
Min. 40 0.5 -
Typ. 0.01 75 36 4 20 8 62 36 16 365 325 1.8
Max. Units 7 9 1.5 1 25 +100 58 2.7 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=250uA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
VGS=10V, ID=45A VGS=4.5V, ID=30A VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=40V, VGS=0V
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o
Drain-Source Leakage Current (T j=150 C) VDS=32V, VGS=0V
Gate-Source Leakage Total Gate Charge
2
VGS=+20V ID=30A VDS=30V VGS=4.5V VDS=20V ID=30A RG=1.0Ω,VGS=10V RD=0.67Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
2235 3580
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2 2
Test Conditions IS=30A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 38 30
Max. Units 1.2 V ns nC
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 75A
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF.