N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9468GM
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement
D D D D...
Description
AP9468GM
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement
D D D D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
G
40V 7mΩ 14.6A
▼ Fast Switching Characteristic
SO-8
S S S
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widly preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 40 ± 20 14.6 11.7 60 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 50
Unit ℃/W
Data and specifications subject to change without notice
201015071-1/4
AP9468GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=14A VGS=4.5V, ID=7A
Min. 40 0.5 -
Typ. 14 32 4 16 10 7 56 26 365 325 1.8
Max. Units 7 9 2 10 100 ±100 51 2....
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