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AP4416GJ Dataheets PDF



Part Number AP4416GJ
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP4416GJ DatasheetAP4416GJ Datasheet (PDF)

AP4416GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 35V 45mΩ 20A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP4416GJ) is available for low-profile applications.

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AP4416GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 35V 45mΩ 20A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP4416GJ) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 35 ±20 20 12 50 26 0.21 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.8 110 Units ℃/W ℃/W Data & specifications subject to change without notice 200418051-1/4 AP4416GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 35 1 - Typ. 0.03 10 6 2 3.5 6 36 11 2 460 80 60 1.1 Max. Units 45 65 3 1 25 ±100 10 740 1.6 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=12A VGS=4.5V, ID=8A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=11A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=12A VDS=30V VGS=4.5V VDS=15V ID=12A RG=3.3Ω,VGS=10V RD=1.25Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=12A, VGS=0V IS=12A, VGS=0V, dI/dt=100A/µs Min. - Typ. 17 10 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP4416GH/J 45 45 T C =25 C o 10V 7.0V ID , Drain Current (A) 10V T C = 150 C o ID , Drain Current (A) 30 30 7.0V 5.0V 15 5.0V 15 4.5V 4.5V V G =3.0V 0 0 2 4 6 8 0 0 2 4 6 V G =3.0V 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 110 1.8 ID=8A 90 Normalized RDS(ON) T C =25 C o I D = 12 A V G =10V 1.4 RDS(ON) (mΩ) 70 1.0 50 30 0.6 2 4 6 8 10 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 16 Normalized VGS(th) (V) 12 1.4 T j =150 o C IS (A) 8 T j =25 o C 1 4 0.6 0 0.2 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP4416GH/J f=1.0MHz 16 1000 ID=12A VGS , Gate to Source Voltage (V) C iss 12 C (pF) V DS =15V V DS =2 5 V V DS = 30 V 8 100 C oss C rss 4 0 0 4 8 12 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100.0 1 100us 10.0 Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 ID (A) 0.1 0.1 0.05 1.0 T c =25 C Single Pulse o 1ms 10ms 100ms DC PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.1 0.1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 V DS =5V ID , Drain Current (A) T j =25 o C 20 VG T j =150 o C QG 4.5V QGS QGD 10 Charge 0 0 2 4 6 8 10 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 .


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