Document
AP4416GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
35V 45mΩ 20A
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP4416GJ) is available for low-profile applications.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 35 ±20 20 12 50 26 0.21 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.8 110 Units ℃/W ℃/W
Data & specifications subject to change without notice
200418051-1/4
AP4416GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 35 1 -
Typ. 0.03 10 6 2 3.5 6 36 11 2 460 80 60 1.1
Max. Units 45 65 3 1 25 ±100 10 740 1.6 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=12A VGS=4.5V, ID=8A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=11A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=12A VDS=30V VGS=4.5V VDS=15V ID=12A RG=3.3Ω,VGS=10V RD=1.25Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2 2
Test Conditions IS=12A, VGS=0V IS=12A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 17 10
Max. Units 1.3 V ns nC
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.
2/4
AP4416GH/J
45 45
T C =25 C
o
10V 7.0V ID , Drain Current (A)
10V T C = 150 C
o
ID , Drain Current (A)
30
30
7.0V
5.0V
15
5.0V
15
4.5V
4.5V
V G =3.0V
0 0 2 4 6 8 0
0 2 4 6
V G =3.0V
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
110
1.8
ID=8A
90
Normalized RDS(ON)
T C =25 C
o
I D = 12 A V G =10V
1.4
RDS(ON) (mΩ)
70
1.0
50
30
0.6 2 4 6 8 10 -50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.8
16
Normalized VGS(th) (V)
12
1.4
T j =150 o C IS (A)
8
T j =25 o C
1
4
0.6
0
0.2 0 0.4 0.8 1.2 1.6 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3/4
AP4416GH/J
f=1.0MHz
16
1000
ID=12A VGS , Gate to Source Voltage (V) C iss
12
C (pF)
V DS =15V V DS =2 5 V V DS = 30 V
8
100
C oss C rss
4
0 0 4 8 12
10 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100.0
1
100us
10.0
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
ID (A)
0.1
0.1
0.05
1.0
T c =25 C Single Pulse
o
1ms 10ms 100ms DC
PDM
t
0.02
T
0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.1 0.1 1 10 100
0.01 0.00001 0.0001 0.001 0.01 0.1 1
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
V DS =5V ID , Drain Current (A) T j =25 o C
20
VG
T j =150 o C
QG 4.5V QGS QGD
10
Charge
0 0 2 4 6 8 10
Q
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
.