N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP3402GEH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Single Drive Requirement ▼ S...
Description
AP3402GEH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface Mount Package ▼ RoHS Compliant G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
35V 18mΩ 38A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP3402GEJ) are available for low-profile applications.
GD
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 35 ±20 38 24 110 34.7 0.27 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.6 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
200420052-1/4
Downloaded from Elcodis.com electronic components distributor
AP3402GEH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
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