HAT2037T

HAT2037T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-530 D (Z) 5th. Edition February 1999 Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 65 34 87 12 1 5 8 D D D 4 G S S S S 2 3 6 7 1, 5, 8 Drain 2, 3, 6, 7 Source 4 Gate HAT2037T Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 28 ±12 5.5 44 5.5 1.3 150 –55 to +150 Unit V V A A A W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min 28 ±12 — — 0.4 — — 9 — — — — — — — — — Typ — — — — — 0.021 0.027 14 780 470 190 20 130 155 160 0.81 55 Max — — ±10 1 1.4 0.028 0.038 — — — — — — — — 1.06 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF =5.5A, VGS = 0 Note3 IF = 5.5A, VGS = 0 diF/ dt =20A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±10V, VDS = 0 VDS = 28 V, VGS = 0 VDS = 10V, I D = 1mA I D = 3A, VGS = 4V Note3 I D = 3A, VGS = 2.5V Note3 I D = 3A, VDS = 10V Note3 VDS = 10V VGS = 0 f = 1MHz VGS = 4V, ID = 3A VDD ≈ 10V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege dra...