HAT2028RJ

HAT2028R/HAT2028RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-524C (Z) 4th. Edition February 1999 Features For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP–8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2028R/HAT2028RJ Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT2028R HAT2028RJ Avalanche energy HAT2028R HAT2028RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. 2. 3. 4. Pch Pch Tch Tstg Note2 Note3 Symbol VDSS VGSS ID I D(pulse) I DR I AP Note4 Note1 Ratings 60 ± 20 4 32 4 — 4 Unit V V A A A — A — mJ W W °C °C EAR Note4 — 1.37 2 3 150 – 55 to + 150 PW ≤ 10 µs, duty cycle ≤ 1 % 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Value at Tch=25°C, Rg≥50Ω 2 HAT2028R/HAT2028RJ Electrical Characteristics (Ta = 25°C) Item Drain to source breakdownvoltage Gate to source breakdownvoltage Gate to source leak current Zero gate voltage drain current Zero gate voltage drain current HAT2028R Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 60 ± 20 — — — — — 1.3 — — 3.3 — — — — — — — — — Typ — — — — — — — — 0.08 0.12 5 280 150...