HAT2027R

HAT2027R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-458 E (Z) 6th. Edition February 1999 Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2027R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg Note2 Note3 Note1 Ratings 20 ± 12 7 56 7 2 3 150 – 55 to + 150 Unit V V A A A W W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min 20 ± 12 — — 0.5 — — 9 — — — — — — — — — Typ — — — — — 0.03 0.038 14 720 450 185 28 145 100 125 0.9 60 Max — — ± 10 10 1.5 0.038 0.053 — — — — — — — — 1.4 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = 7 A, VGS = 0 Note4 IF = 7 A, VGS = 0 diF/ dt = 20 A/µs Test Conditions I D = 10 mA, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 10 V, VDS = 0 VDS = 20 V, VGS = 0 VDS = 10 V, I D = 1 mA I D = 4 A, VGS = 4 V Note4 I D = 4 A, VGS = 2.5 V Note4 I D = 4 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1...