HAT2025R

HAT2025R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-518C (Z) 4th. Edition February 1999 Features High speed switching Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2025R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ± 20 8 64 8 2.5 150 – 55 to + 150 Unit V V A A A W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ± 20 — — 1.3 — — 7 — — — — — — — — — Typ — — — — — 0.019 0.030 11 660 510 130 30 265 35 58 0.8 55 Max — — ± 10 10 2.4 0.026 0.050 — — — — — — — — 1.3 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = 8 A, VGS = 0 Note3 IF = 8 A, VGS = 0 diF/ dt = 20 A/µs Test Conditions I D = 10 mA, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA I D = 4 A, VGS = 10 V Note3 I D = 4 A, VGS = 4.5 V Note3 I D = 4 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1MHz VGS = 4 V, ID = 4 A VDD ≅ 10 V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to sour...