HAT2019R
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-481 D (Z) 5th. Edition February 1999 Features
Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting
Outline
SOP–8
8 5 7 6
5 6 7 8 D D D D
3 1 2
4
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
HAT2019R
Absolute Maximum Ratings (...
