HAT2016R
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-438 H (Z) 9th. Edition June 1997 Features
Low on-resistance Capable of 4 V gate drive Low drive current High density mounting
Outline
SOP–8
8 5 7 6
3 1 2 7 8 D D 5 6 D D
4
2 G
4 G
S1
S3
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
MOS1
MOS2
HAT2016R
Absolute Maximum Rat...
