SiE854DF

SiE854DF Vishay Siliconix N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY ID (A) VDS (V) 100 RDS(on) (Ω) 0.0142 at VGS = 10 V Silicon Limit 64 Package Qg (Typ.) Limit 60a 50 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size Low Qgd/Qgs Ratio Helps Prevent Shoot-Through 100 % Rg and UIS Tested Compliant to RoHS directive 2002/95/EC Package Drawing www.vishay.com/doc?72945 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS D D S G D Primary Side Switch Half-Bridge D G D 1 G 2 S S 3 4 Top View D 5 5 4 3 2 1 S N-Channel MOSFET For Related Documents www.vishay.com/ppg?69824 Bottom View Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SiE854DF-T1-E3 (Lead (Pb)-free) SiE854DF-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH ID Symbol VDS VGS Limit 100 ± 20 64 (Silicon Limit) 60a (Package Limit) 52 13.2b, c 10.5b, c 60 60a 4.3b, c 40 80 125 80 5.2b, c 3.3b, c - 55 to 150 260 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Ene...