N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40U03GH
RoHS-compliant Product
Advanced Power Electronics Corp.
Lower Gate Charge Simple Drive Requirement Fast Switc...
Description
AP40U03GH
RoHS-compliant Product
Advanced Power Electronics Corp.
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 25m 20A
S
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G D S
TO-252(H)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 30 ±20 20 14 60 15 0.1 -55 to 175 -55 to 175
Units V V A A A W W/
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 10 110 Units /W /W
Data & specifications subject to change without notice
200720071-1/4
AP40U03GH
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=12A VGS=4.5V, ID=8A
Min. 30 1 -
Typ. 12 8 1.5 5 5 36.5 16 5 450 80 75 1.4
Max. Uni...
Similar Datasheet