Document
AP4438BGM-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement
D D D D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
G
30V 14mΩ 10.4A
D
▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
SO-8
S S S
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 +20 10.4 8.4 40 2.5 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 50
Unit ℃/W 1 201111303
Data and specifications subject to change without notice
AP4438BGM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=9A VGS=4.5V, ID=5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2
Min. 30 1 -
Typ. 9.8 16.8 1.5 14.5 7.5 1.8 5 7 7 17 5 460 140 105 1.5
Max. Units 14 20 3 10 +100 9 740 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω
VDS=VGS, ID=250uA VDS=10V, ID=9A VDS=30V, VGS=0V VGS=+20V, VDS=0V ID=9A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω VGS=10V VGS=0V VDS=15V f=1.0MHz f=1.0MHz
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2
Test Conditions IS=2.1A, VGS=0V IS=9A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 20 11
Max. Units 1.2 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP4438BGM-HF
50 50
T A = 25 C
40
o
ID , Drain Current (A)
ID , Drain Current (A)
10 V 7.0 V 6.0 V 5.0 V
T A = 150 C
40
o
10 V 7.0 V 6.0 V 5.0 V
30
30
V G =4.0V
20
V G =4.0V
20
10
10
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
24
1.9
ID=6A T A =25 ℃
20
ID=9A V G =10V Normalized RDS(ON)
1.4
RDS(ON) (mΩ)
16
0.9
12
8
0.4 2 4 6 8 10 -50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.6
10
o T j =150 C
8
T j =25 C Normalized VGS(th) (V)
1.2
o
IS(A)
6
0.8
4
0.4
2
0
0.0 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3
AP4438BGM-HF
10 800
f=1.0MHz
ID=9A VGS , Gate to Source Voltage (V)
8 600
V DS = 15 V
6
C (pF)
C iss
400
4
200 2
C oss C rss
0 0 4 8 12 16
0 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Operation in this area limited by RDS(ON) 10
Normalized Thermal Response (Rthja)
0.2
100us
0.1
0.1 0.05
ID (A)
1
1ms 10ms 100ms 1s T A =25 o C Single Pulse DC
0.02 0.01
PDM 0.01
Single Pulse
t T
Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=125 oC/W
0.1
0.01 0.01 0.1 1 10 100
0.001 0.0001 0.001 0.01 0.1 1 10 100 1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 4.5V QGS QGD
10% VGS td(on) tr td(off) tf
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
.