Silicon P-Channel Power MOSFET
HAT1038R/HAT1038RJ
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-663C (Z) 4th. Edition February 19...
Description
HAT1038R/HAT1038RJ
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-663C (Z) 4th. Edition February 1999 Features
For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting
Outline
SOP–8
8 5 7 6
3 1 2 7 8 D D 5 6 D D
4
2 G
4 G
S1
S3
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
MOS1
MOS2
HAT1038R/HAT1038RJ
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT1038R HAT1038RJ Avalanche energy HAT1038R HAT1038RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. 2. 3. 4. Pch Pch Tch Tstg
Note2 Note3
Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note4 Note1
Ratings – 60 ± 20 – 3.5 – 28 – 3.5 — – 3.5
Unit V V A A A — A — mJ W W °C °C
EAR
Note4
— 1.05 2 3 150 – 55 to + 150
PW ≤ 10 µs, duty cycle ≤ 1 % 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10 s 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10 s Value at Tch = 25°C, Rg ≥ 50 Ω
2
HAT1038R/HAT1038RJ
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Zero gate voltage drain current HAT1038R Symbol Min V(BR)DSS V(BR)GSS I GSS I DSS – 60 ± 20 — — — — — – 1.2 — — 3 — — — — — — — — — Typ — — — — ...
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