HAT1031T

HAT1031T Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-528D (Z) 5th. Edition December 1998 Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 65 34 87 1 D 8 D 12 4 G 5 G S S 2 3 S S 6 7 1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate MOS1 MOS2 HAT1031T Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –20 ±10 –2.5 –20 –2.5 Unit V V A A A W W °C °C Body–drain diode reverse drain current I DR Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Pch Pch Tch Tstg Note2 Note3 1 1.5 150 –55 to +150 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min –20 ±10 — — –0.5 — — 2.6 — — — — — — — — — Typ — — — — — 0.13 0.21 4 390 200 70 14 75 60 55 –0.9 45 Max — — ±10 –1 –1.5 0.16 0.28 — — — — — — — — –1.17 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = –2.5A, VGS = 0 Note4 IF = –2.5A, VGS = 0 diF/ dt =20A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±8V, VDS = 0 VDS = –20 V, VGS = 0 VDS = –10V, I D = –1mA I D = –2A, VGS = –4V Note4 I D = –2A, VGS = –2.5V Note4 I D = –2A, VDS = –10V Note4 VDS = –10V VGS = 0...