NGD8209NT4G

NGD8209N Ignition IGBT 12 A, 410 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features http://onsemi.com Ideal for Coil−on−Plug Applications DPAK Package Offers Smaller Footprint and Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Low Saturation Voltage High Pulsed Current Capability These are Pb−Free Devices 12 AMPS 410 VOLTS VCE(on) 3 2.0 V @ IC = 6.0 A, VGE . 4.0 V C G RG RGE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD (Machine Model) R = 0 Ω, C = 200 pF Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VCES VCER VGE IC ESD 8.0 ESD PD TJ, Tstg 800 94 0.63 −55 to +175 V Watts W/°C °C Value 445 445 15 12 30 Unit VDC VDC VDC ADC AAC kV 1 2 3 4 E DPAK CASE 369C STYLE 7 MARKING DIAGRAM 1 Gate 2 Collector 3 Emitter Y = Year WW = Work Week G = Pb−Free Device YWW NGD 8209G 4 Collector Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings ar...