AP4438GSM-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Good Recovery Time ▼ Fa...
AP4438GSM-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Good Recovery Time ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free
D D D D
N-CHANNEL MOSFET WITH
SCHOTTKY DIODE
BVDSS RDS(ON)
G
30V 11.5mΩ 11.7A
ID
D
SO-8
S S
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G S
Schottky Diode
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM VKA IF@TA=25℃ IFM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current
1 3 3
Rating 30 +12 11.7 9.3 50 30 1 25 2.5 2.0 -55 to 150 -55 to 150
Units V V A A A V A A W W ℃ ℃
Schottky Reverse Voltage Continous Forward Current Pulsed Diode Forward Current Max Power Dissipation (MOSFET) Max Power Dissipation (
Schottky) Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Rthj-a Parameter
Maximum Thermal Resistance, Junction-ambient (MOSFET)
3
Value 50 60
Unit ℃/W ℃/W
Maximum Thermal Resistance, Junction-ambient 3(
Schottky)
Data and specifications subject to change without notice
1 201008121
AP4438GSM-HF
Electrical Characteristics@Tj=25oC(un...