AP4438GSM-HF

AP4438GSM-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Good Recovery Time ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free D D D D N-CHANNEL MOSFET WITH SCHOTTKY DIODE BVDSS RDS(ON) G 30V 11.5mΩ 11.7A ID D SO-8 S S S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G S Schottky Diode Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM VKA IF@TA=25℃ IFM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 30 +12 11.7 9.3 50 30 1 25 2.5 2.0 -55 to 150 -55 to 150 Units V V A A A V A A W W ℃ ℃ Schottky Reverse Voltage Continous Forward Current Pulsed Diode Forward Current Max Power Dissipation (MOSFET) Max Power Dissipation (Schottky) Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient (MOSFET) 3 Value 50 60 Unit ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient 3(Schottky) Data and specifications subject to change without notice 1 201008121 AP4438GSM-HF Electrical Characteristics@Tj=25oC(un...