AP4810GSM

AP4810GSM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Good Recovery Time ▼ Fast Switching Performance D D D D N-CHANNEL MOSFET WITH SCHOTTKY DIODE BVDSS RDS(ON) G 30V 13.5mΩ 11A ID D SO-8 S S S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G S Schottky Diode Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM VKA IF@TA=25℃ IFM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 +20 11 9.3 50 30 1 25 2.5 2.0 -55 to 150 -55 to 150 Units V V A A A V A A W W ℃ ℃ Schottky Reverse Voltage Continous Forward Current Pulsed Diode Forward Current Max Power Dissipation (MOSFET) Max Power Dissipation (Schottky) Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient (MOSFET) 3 Value 50 60 3 Unit ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient (Schottky) Data and specifications subject to change without notice 1 200910296 AP4810GSM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-...