N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP0603GMA
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ SO-8 similar area footprint and pin assignment ▼ L...
Description
AP0603GMA
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ SO-8 similar area footprint and pin assignment ▼ Low Gate Charge ▼ Fast Switching Speed ▼ RoHS Compliant G D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 6mΩ 75A
Description
S
D
The APAK-5 package is preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
SS S G
APAK-5
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 30 ±20 75 55 300 62.5 0.5
4
Units V V A A A W W/ ℃ mJ A ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
29 24 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient
3
Value Max. Max. 2 85
Units ℃/W ℃/W
Data & specifications subject to change without notice
200401053-1/4
AP0603GMA
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 30 1 -
Typ. 0.018 32 33 7.5 24 11.2 77 35 67 550 380 1.9
Max. Units 6 10 3 1 500 ±100 52 2.8 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
Breakd...
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