Advanced Power
Electronics Corp.
AP1003BMP-3
N-channel Enhancement-mode Power MOSFET
Lead(Pb)-free, Halogen-free
Low Conductance Losses
Fast Switching Performance
Low Profile (< 0.7mm )
D
BV DSS
30V
RDS(ON)
4.5mΩ
G ID 18.4A
S
Description
The AP1003BMP-3 uses the latest APEC Power MOSFET silicon
technology with advanced technology GreenFETTM packaging
to provide the lowest on-resistance, a low profile and dual-sided
cooling capability.
The GreenFETTM package is compatible with existing soldering
techniques and is ideal for power applications, especially for
high-frequency/high-efficiency DC-DC converters.
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TA=25°C
ID at TA= 70°C
ID at TC=25°C
IDM
PD at TA=25°C
PD at TA=70°C
PD at TC=25°C
EAS
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Continuous Drain Current4
Pulsed Drain Current1
Total Power Dissipation3
Total Power Dissipation3
Total Power Dissipation4
Single Pulse Avalanche Energy5
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case4
Maximum Thermal Resistance, Junction-ambient3
GreenFETTM
S
DG
S
D
Rating
30
±20
18.4
14.7
75
150
2.3
1.5
42
28.8
24
-40 to 150
-40 to 150
MP
Units
V
V
A
A
A
A
W
W
W
mJ
A
°C
°C
3 °C/W
55 °C/W
Ordering Information
AP1003BMP-3TR RoHS-compliant halogen-free GreenFETTM MP package, shipped on tape and reel (4800 pcs/reel)
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
20090923-3 PRELIMINARY 1/5
