N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP90T03GS
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Lower On- resistance ▼ Simple Drive Requirement ▼ F...
Description
AP90T03GS
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Lower On- resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 4mΩ 75A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S
TO-263(S)
Absolute Maximum Ratings
Symbol VDS VGS ID@Tc=25℃ ID@Tc=100℃ IDM PD@Tc=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1 3
Rating 30 ±20 75 63 350 96 0.7 -55 to 150 -55 to 150
Units V V A A A W W/℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.3 62 Units ℃/W ℃/W
Data and specifications subject to change without notice
1 200712202
AP90T03GS
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
2
Min. 30 0.8 -
Typ. 0.02 55 60 8.5 38 14 83 66 120 1010 890
Max. Units 4 6 3 1 25 ±100 96 V ...
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