DatasheetsPDF.com

AP92T03GP-HF Dataheets PDF



Part Number AP92T03GP-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP92T03GP-HF DatasheetAP92T03GP-HF Datasheet (PDF)

AP92T03GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 4mΩ 80A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for commercial-indus.

  AP92T03GP-HF   AP92T03GP-HF



Document
AP92T03GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 4mΩ 80A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP92T03GP) are available for low-profile applications. G D S TO-263(S) G D TO-220(P) S Units V V A A A W W/℃ ℃ ℃ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 Rating 30 +20 80 50 320 89 0.71 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 1.4 40 62 Units ℃/W ℃/W ℃/W 1 201303053 Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice AP92T03GS/P-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VGS=4.5V, ID=30A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Symbol VSD trr Qrr Drain-Source Leakage Current o Min. 30 0.5 Min. - Typ. 100 45 6 26 12 63 40 7 930 770 Typ. 39 42 Max. Units 4 5.2 2 1 250 +100 72 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Gate Threshold Voltage VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=24V, VGS=0V VGS= +20V, VDS=0V ID=40A VDS=20V VGS=4.5V VDS=15V ID=40A RG=1Ω,VGS=10V RD=0.375Ω VGS=0V VDS=25V f=1.0MHz Test Conditions IS=40A, VGS=0V 2 Drain-Source Leakage Current (T j=125 C) VDS=24V ,VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Forward On Voltage 2 2 3500 5600 Source-Drain Diode Max. Units 1.3 V ns nC Reverse Recovery Time IS=20A, VGS=0V, dI/dt=100A/µs Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 80A . 4.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP92T03GS/P-HF 280 240 240 T C = 25 o C ID , Drain Current (A) 200 ID , Drain Current (A) 10 V 7.0 V 5.0 V 4.5 V T C = 150 o C 200 160 10V 7.0V 5.0V 4.5V 160 120 120 V G = 3.0 V V G = 3 .0V 80 80 40 40 0 0 2 4 6 8 0 0 2 4 6 8 10 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.4 I D =30A T C =25 o C 2.0 8 I D =40A V G =10V Normalized RDS(ON) RDS(ON) (mΩ) 1.6 6 1.2 4 0.8 2 2 4 6 8 10 0.4 25 50 75 100 125 150 V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 6.0 40 30 5.0 RDS(ON) (mΩ) T j =150 o C IS(A) T j =25 o C V GS =4.5V 4.0 20 V GS =10V 3.0 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 2.0 0 20 40 60 80 100 V SD , Source-to-Drain Voltage (V) I D , Drain Current (A) Fig 5. Forward Characteristic of Reverse Diode Fig 6. On-Resistance vs. Drain Current 3 AP92T03GS/P-HF f=1.0MHz 14 10000 I D = 40 A VGS , Gate to Source Voltage (V) 12 10 8 C (pF) V DS = 12 V V DS = 16 V V DS = 20 V C iss 1000 6 C oss C rss 4 2 0 0 20 40 60 80 100 120 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100 100us 0.2 ID (A) 0.1 0.1 0.05 1ms 10 T C =25 o C Single Pulse 1 0.1 1 10 10ms 100ms 1s DC PDM 0.02 t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 0.01 100 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , P.


AP92T03GS-HF AP92T03GP-HF AP90T03GH


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)