N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2304GN-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small package outline ▼ ...
Description
AP2304GN-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small package outline ▼ Surface mount package ▼ RoHS Compliant & Halogen-Free
S SOT-23 G D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 117mΩ 2.7A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current
1 3 3
Rating 25 +20 2.7 2.2 10 1.38 0.01 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 90
Unit ℃/W
Data and specifications subject to change without notice
1 200908315
AP2304GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=2.5A VGS=4.5V, ID=2A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o
Min. 25 1 -
Typ. 3.4 5.9 0.8 2.1 4.5 11.5 12 3 110 85 39
Max. Units 117 190 3...
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