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AP1005BSQ Dataheets PDF



Part Number AP1005BSQ
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP1005BSQ DatasheetAP1005BSQ Datasheet (PDF)

AP1005BSQ Halogen-Free Product Advanced Power Electronics Corp. ▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.7mm ) G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 25V 3.8mΩ 19A Description The AP1005BSQ used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible. The GreenFETTM package is compatible with existing soldering techniques and is.

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AP1005BSQ Halogen-Free Product Advanced Power Electronics Corp. ▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.7mm ) G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 25V 3.8mΩ 19A Description The AP1005BSQ used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible. The GreenFETTM package is compatible with existing soldering techniques and is ideal for power application, especially for high frequency / high efficiency DC-DC converters. GreenFETTM D G S D Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ ID@TC=25℃ IDM PD@TA=25℃ PD@TA=70℃ PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 3 3 4 5 3 3 4 SQ Rating 25 +20 19 15 84 150 2.2 1.4 41.7 28.8 24 -40 to 150 -40 to 150 Units V V A A A A W W W mJ A ℃ ℃ Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range Thermal Data Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case 4 3 3 58 ℃/W ℃/W 1 201009152 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice AP1005BSQ Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=19A VGS=4.5V, ID=15A Min. 25 1 - Typ. 2.6 4.3 30 16.6 3 0.8 9.2 3.7 10 11 60 28 9 570 210 3.3 Max. Units 3.8 7.5 2.5 1 150 +100 26.6 V mΩ mΩ V S uA uA nA nC nC nC nC nC nC ns ns ns ns pF pF pF Ω VGS(th) gfs IDSS IGSS Qg Qgs1 Qgs2 Qgd Qgodr Qsw td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID=250uA VDS=10V, ID=15A VDS=20V, VGS=0V VGS=+20V, VDS=0V ID=15A VDS=13V VGS=4.5V Drain-Source Leakage Current (T j=125 C) VDS=20V ,VGS=0V Gate-Source Leakage Total Gate Charge 2 Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate-Drain ("Miller") Charge Gate Charge Overdrive Switch Charge (Qgs2+Qgd) Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 VDS=13V ID=12A RG= 1.5 Ω VGS= 10 V VGS=0V VDS=25V f=1.0MHz f=1.0MHz - 1360 2180 Source-Drain Diode Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current ( Body Diode ) Test Conditions 1 Min. - Typ. 37 32 Max. Units 52 150 1 55 48 A A V ns nC Pulsed Source Current ( Body Diode ) Forward On Voltage 2 IS=15A, VGS=0V IS=15A, VGS=0V, dI/dt=100A/µs - Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board. 4.TC measured with thermocouple mounted to top (Drain) of part. o 5.Starting Tj=25 C , L=0.1mH , RG=25Ω , IAS=24A THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP1005BSQ 160 120 T A =25 C ID , Drain Current (A) 120 o ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V G =4.0V T A =150 C 100 o 80 10V 7.0V 6.0V 5.0V V G =4.0V 80 60 40 40 20 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 6 2 I D =15A T A =25 o C 5 I D =19A V G =10V Normalized RDS(ON) 1.6 RDS(ON) (mΩ) 4 1.2 3 0.8 2 2 4 6 8 10 0.4 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 20 16 1.2 T j =150 o C IS(A) 12 T j =25 o C Normalized VGS(th) (V) 1.5 0.8 8 0.4 4 0 0 0.5 1 0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP1005BSQ 10 2000 f=1.0MHz I D =15A V DS =13V VGS , Gate to Source Voltage (V) 8 1600 C iss C (pF) 6 1200 4 800 C oss 2 400 C rss 0 0 8 16 24 32 0 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1.


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