N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4434GM
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low on-resistance
D D D D
N-CHANNEL ENHANCEMENT MOD...
Description
AP4434GM
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low on-resistance
D D D D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
G
20V 18.5mΩ 8.3A
D
▼ Capable of 2.5V gate drive ▼ Surface mount package
ID
SO-8
S
S
S
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage
3 Continuous Drain Current ,VGS @ 4.5V
Rating 20 ±12 8.3 6.7 30 2 0.02 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Continuous Drain Current ,VGS @ 4.5V Pulsed Drain Current
1
3
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit ℃/W
Data and specifications subject to change without notice
200607072-1/4
AP4434GM
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
o
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 20 0.3 -
Typ. 0.01 9 17 1.7 5.8 9 10 26 7.5 940 175 140 1.2
Max. Units 18.5 25 1 1 25 ±100 27 1500 1.8 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistan...
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