AP30P10GI-HF-3

Advanced Power Electronics Corp. AP30P10GI-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS-compliant, halogen-free D BV DSS RDS(ON) G S -100V 80mΩ -25A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP30P10GI-HF-3 is in the TO-220CFM package, which is widely used for commercial and industrial applications, where a low PCB footprint and/or isolated tab mounting is required. G D S TO-220CFM (I) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating -100 ±20 -25 -15 -80 31.3 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4 65 Units °C/W °C/W Ordering Information AP30P10GI-HF-3TR RoHS-compliant, halogen-free TO-220CFM, shipped in tubes. ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 200812232-3 1/5 Advanced Power Electronics Corp. Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-...