Document
Advanced Power Electronics Corp.
AP2311GK-HF-3
P-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Gate Charge Fast Switching Characteristics RoHS-compliant, Halogen-free
D
BV DSS R DS(ON)
G S
-60V 250mΩ -2.4A
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP2311GK-HF-3 is in the popular SOT-223 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as load switches.
D
S D SOT-223 G
Absolute Maximum Ratings
Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating -60 ± 20 -2.4 -2 -10 2.78 -55 to 150 -55 to 150
Units V V A A A W °C °C
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 45 Unit °C/W
Ordering Information
AP2311GK-HF-3TR RoHS-compliant halogen-free SOT-223, shipped on tape and reel, 3000pcs/ reel
©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com
201109091-3
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Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
AP2311GK-HF-3
Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-1.8A VGS=-4.5V, ID=-1.4A
Min. -60 -1 -
Typ. 2 6 1 3 8 5 22 3 510 50 40
Max. Units 250 300 -3 -25 ±100 9.6 816 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDS=VGS, ID=-250uA VDS=-10V, ID=-1A VDS=-48V, VGS=0V VGS=±20V, VDS=0V ID=-1A VDS=-48V VGS=-4.5V VDS=-30V ID=-1A RG=3.3Ω VGS=-10V VGS=0V VDS=-25V f=1.0MHz
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2
Test Conditions IS=-1.2A, VGS=0V IS=-1A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 30 38
Max. Units -1.2 V ns nC
Reverse Recovery Time Reverse Recovery Charge
Notes:
1. Pulse width limited by maximum junction temperature. 2. Pulse test - pulse width < 300µs , duty cycle < 2%
2 3. Surface mounted on 1in copper pad of FR4 board, t <10sec; 120°C/W when mounted on minimum copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Advanced Power Electronics Corp.
Typical Electrical Characteristics
10 10
AP2311GK-HF-3
T A =150 C
8
T A =25 o C
8
-ID , Drain Current (A)
-ID , Drain Current (A)
- 10V - 7.0V - 5.0V - 4.5V
o
- 10V - 7.0V - 5.0V - 4.5V
6
6
4
V G = - 3.0V
4
V G = - 3.0V
2
2
0 0 1 2 3 4 5 6
0 0 1 2 3 4 5 6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
250
Fig 2. Typical Output Characteristics
2.2
I D = -1.4 A
240
T A =25 C Normalized RDS(ON)
1.8
o
I D = -1.8 A V G =-10V
Ω RDS(ON) (m Ω)
230
1.4
220
1.0 210
200 2 4 6 8 10
0.6 -50 0 50 100 150
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3.
2
On-Resistance vs. Gate Voltage
1.6
Fig 4. Normalized On-Resistance vs. Junction Temperature
1.5
Normalized -VGS(th) (V)
1.2
-IS (A)
1
0.8
T j =150 o C
T j =25 o C
0.5
0.4
0 0 0.4 0.8 1.2
0.0 -50 0 50 100 150
-V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( C)
o
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage vs. Junction Temperature
©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Advanced Power Electronics Corp.
Typical Electrical Characteristics (cont.)
10
AP2311GK-HF-3
f=1.0MHz
610
-VGS , Gate to Source Voltage (V)
I D =-1A V DS =-48V
8
490
C iss
C (pF)
6
370
4
250
2
130
C oss C rss
0 0 4 8 12
10
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
100
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thja)
Duty factor=0.5
10
0.2
.