AP9567GH

AP9567GH/J Pb Free Plating Product Advanced Power Electronics Corp. ϰ Lower On-resistance ϰ Simple Drive Requirement ϰ Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -40V 50mӨ -22A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9567GJ) is available for low-profile applications. G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25к ID@TC=100к IDM PD@TC=25к TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -40 ±25 -22 -14 -50 34.7 0.28 -55 to 150 -55 to 150 Units V V A A A W W/ к к к Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.6 110 Units к/W к/W Data and specifications subject to change without notice 201229041 AP9567GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ӔBVDSS/ӔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -40 -1 - Typ. -0.03 12 11 3 6 10 43 24 45 880 140 110 5 Max. Units 50 70 -3 -1 -25 ±100 18 1400 8 V V/к mӨ mӨ V S uA uA nA nC nC nC ns ns ns ns...