AP3310GJ-HF-3

Advanced Power Electronics Corp. AP3310GH/J-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristics 2.5V Gate Drive Capability RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID -20V 150mΩ -10A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S TO-252 (H) The AP3310GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP3310GJ-HF-3) is available where a small PCB footprint is required. G D S TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID at TC =25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -20 ±12 -10 -6.2 -24 25 0.2 -55 to 150 -55 to 150 Units V V A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient(PCB mount)3 Value 5.0 62.5 Unit °C/W °C/W °C/W Maximum Thermal Resistance, Junction-ambient 110 Ordering Information AP3310GH-HF-3TR AP3310GJ-HF-3TB RoHS-compliant TO-252 shipped on tape and reel (3000 pcs/reel) RoHS-compliant ...