AP2607GY-HF-3

Advanced Power Electronics Corp. AP2607GY-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Gate Charge Small Footprint, Low Profile RoHS-compliant, halogen-free D BV DSS R DS(ON) ID -20V 52mΩ -5A G S Description S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D D G D D The SOT-26 package is widely used for commercial and industrial applications, where space is at a premium. SOT-26 (Y) Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -20 ±8 -5 -4 -20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 62.5 Unit °C/W Ordering Information AP2607GY-HF-3TR : in RoHS-compliant halogen-free SOT-26 shipped on tape and reel (3000pcs/reel) ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 201005142-3 1/5 Advanced Power Electronics Corp. Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-4.5V, ID=-5A VGS=-2.5V, ...