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AP2305GN-HF

Advanced Power Electronics

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2305GN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ ...


Advanced Power Electronics

AP2305GN-HF

File Download Download AP2305GN-HF Datasheet


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AP2305GN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant S SOT-23 G D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 65mΩ - 4.2A Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating - 20 + 12 -4.2 -3.4 -10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W 1 200912168 Data and specifications subject to change without notice AP2305GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-4.5A VGS=-4.5V, ID=-4.2A VGS=-2.5V, ID=-2.0A Min. -20 -0.5 - Typ. 14 13 1.4 4 8 17 24 33 920 90 85 4.5 Max. Units...




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