N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP4413GM-HF-3
P-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low On...
Description
Advanced Power Electronics Corp.
AP4413GM-HF-3
P-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, Halogen-free
D
BV DSS RDS(ON)
G S
-20V 30mΩ -7.8A
ID
Description
D
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP4413GM-HF-3 is in the SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters.
D D D G
SO-8
S S
S
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC= 70°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating -20 +20 -7.8 -6.2 -30 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/°C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit °C/W
Ordering Information
AP4413GM-HF-3TR RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel)
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
200404132-3
1/5
Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS
∆ BV DSS/∆ Tj
AP4413GM-HF-3
Parameter Drain-Source Break...
Similar Datasheet