N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP02N90H/J
Pb Free Plating Product
Advanced Power Electronics Corp.
¡¿ ¡¿ ¡¿ Simple Drive Requirement Low On-resistance...
Description
AP02N90H/J
Pb Free Plating Product
Advanced Power Electronics Corp.
¡¿ ¡¿ ¡¿ Simple Drive Requirement Low On-resistance Fast Switching Characteristics G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
900V 7.2£[ 1.9A
Description
S
G D
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP02N90J) is available for lowprofile applications.
S
TO-252(H)
G D S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25¢J ID@TC=100¢J IDM PD@TC=25¢J EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 900 ±30 1.9 1.2 6 62.5 0.5
2
Units V V A A A W W/¢J mJ A ¢J ¢J
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
36 1.9 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.0 110 Units ¢J /W ¢J /W
Data & specifications subject to change without notice
200418063-1/4
AP02N90H/J
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
£GB V...
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