Document
Advanced Power Electronics Corp.
AP02N90I-HF-3
N-channel Enhancement-mode Power MOSFET
Fully isolated package Simple Drive Requirement Fast Switching Performance RoHS-compliant, halogen-free G S D
BV DSS RDS(ON) ID
900V 7.2Ω 1.9A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP02N90I-HF-3 is in the TO-220CFM isolated through-hole package which is widely used in commercial and industrial applications where a small PCB footprint or an attached isolated heatsink is required. This device is well suited for use in high voltage applications such as off-line AC/DC converters.
G
D
S
TO-220CFM (I)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 900 ±30 1.9 1.2 6 34.7 36 1.9 -55 to 150 -55 to 150
Units V V A A A W mJ A °C °C
Total Power Dissipation Single Pulse Avalanche Energy3 Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.6 62 Units °C/W °C/W
Ordering Information
AP02N90I-HF-3TB : in RoHS-compliant halogen-free TO-220CFM, shipped in tubes (50pcs/tube)
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
200604182-3
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Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA
AP02N90I-HF-3
Min. 900 2 Typ. 0.8 2 12 2.5 4.7 10 5 18 9 630 40 4 Max. Units 7.2 4 10 100 ±100 20 1000 V V/°C Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF
∆ BV DSS /∆ T j
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Breakdown Voltage Temperature Coefficient Reference to 25 °C, ID=1mA
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150oC)
VGS=10V, ID=0.85A VDS=VGS, ID=250uA VDS=10V, ID=1.9A VDS=900V, VGS=0V VDS=720V, VGS=0V VGS=±30V ID=1.9A VDS=540V VGS=10V VDD=450V ID=1.9A RG=10Ω , VGS=10V RD=236Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
3
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
3
Test Conditions IS=1.9A, VGS=0V IS=1.9A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 360 1.8
Max. Units 1.3 V ns µC
Reverse Recovery Time Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area 2.Starting Tj=25oC , VDD=50V , L=20mH , RG=25Ω, IAS=1.9A 3.Pulse width <300us, duty cycle < 2%
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Advanced Power Electronics Corp.
Typical Electrical Characteristics
2.0
AP02N90I-HF-3
1.25
T C =25 C
1.6
o
ID , Drain Current (A)
1.2
ID , Drain Current (A)
10V 8.0V 6.0V 5.0V
T C =150 C
1.00
o
10V 8.0V 6.0V 5.0V V G =4.5V
0.75
0.8
0.50
0.4
V G =4.5V
0.25
0.0
0.00 0 3 6 9 12 15 18 0 3 6 9 12 15 18
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2.8
Fig 2. Typical Output Characteristics
1.2
2.4
1.1
I D = 0.85 A V G =10V
Normalized BVDSS (V)
Normalized RDS(ON)
-50 0 50 100 150
2.0
1.6
1.0
1.2
0.8 0.9
0.4
0.8
0.0 -50 0 50 100 150
Junction Temperature ( o C)
T j , Junction Temperature ( o C )
Fig 3.
Normalized BVDSS vs. Junction Temperature
1.6
Fig 4. Normalized On-Resistance vs. Junction Temperature
2.0
1.5
Normalized VGS(th) (V)
T j =150 o C IS(A)
1.0
T j =25 o C
1.2
0.8
0.5
0.0 0 0.2 0.4 0.6 0.8 1 1.2
0.4
-50
0
50
100
150
V SD , Source-to-Drain Voltage (V)
T j ,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage vs. Junction Temperature
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Typical Electrical Characteristics (cont.)
AP02N90I-HF-3
f=1.0MHz
14
1000
12
I D = 1.9 A V DS = 180 V V DS = 360 V V DS = 540 V C (pF)
C iss
VGS , Gate to Source Voltage (V)
10
100
8
C oss
6
10 4
C rs.