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AP03N70J-H

Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP03N70H/J-H Pb Free Plating Product Advanced Power Electronics Corp. ¡¿ ¡¿ ¡¿ ¡¿ Repetitive Avalanche Rated Fast Switc...



AP03N70J-H

Advanced Power Electronics


Octopart Stock #: O-840862

Findchips Stock #: 840862-F

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AP03N70H/J-H Pb Free Plating Product Advanced Power Electronics Corp. ¡¿ ¡¿ ¡¿ ¡¿ Repetitive Avalanche Rated Fast Switching Speed Simple Drive Requirement RoHS Compliant G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 700V 4.4£[ 2.5A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version (AP03N70J) is available for lowprofile applications. G D S TO-252(H) G DS TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25¢J ID@TC=100¢J IDM PD@TC=25¢J EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 700 ±30 2.5 1.6 8 54.3 0.44 2 Units V V A A A W W/¢J mJ A ¢J ¢J Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 31 2.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.3 110 Units ¢J /W ¢J /W Data & specifications subject to change without notice 200417062-1/4 AP03N70H/J-H Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS £GB VDSS/£G Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 700 2 - Typ. 0.6 2 12 3 4 8.5 6 19 8 590 50 6 3.4 Max. Units 4.4 4 10 1...




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